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| NPN BUX80 HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTOR The BUX80 is silicon multiepitaxial planar NPN transistor in Jedec TO-3. They are intended for use in converters, inverters, switching regulators and motor control systems applications. ABSOLUTE MAXIMUM RATINGS Symbol VCEO VCER VEBO VCES IC ICM IB Pt TJ TStg Collector-Emitter Voltage Collector- Emitter Voltage Emitter-Base Voltage Collector-Emitter Voltage Collector Current Collector Peak Current Base Current Total Power Dissipation Junction Temperature Storage Temperature Ratings IB = 0 RBE = 50 IC = 0 VBE = 0 tp = 10ms @ TC = 40 Value 400 500 10 800 10 15 5 100 150 -65 to +150 Unit V V V V A A A Watts C C THERMAL CHARACTERISTICS Symbol RthJC Ratings Thermal Resistance, Junction to Case Value 1.1 Unit C/W ELECTRICAL CHARACTERISTICS TC=25C unless otherwise noted Symbol VCEO(SUS) VCER IEBO ICES Ratings Collector-Emitter Sustaining Voltage (1) Collector-Emitter Sustaining Voltage (1) Emitter Cutoff Current Collector Cutoff Current IC=100 mA Test Condition(s) Min Typ Mx Unit 400 500 10 1 3 V V mA mA IC=100 mA , RBE = 50 VCE=10 V , IC=0 VCE= VCES , VBE= 0 VCE= VCES , VBE= 0, Tcase = 125C COMSET SEMICONDUCTORS 1/2 NPN BUX80 hFE VCE(SAT) VBE(SAT) DC Current Gain (1) Collector-Emitter saturation Voltage (1) Base-Emitter saturation Voltage (1) IC=1.2 A , VCE=5.0 V IC=5 A , IB=1 A IC=8 A , IB=2.5 A IC=5 A , IB=1 A IC=8 A , IB=2.5 A - 30 - 1.5 3 1.4 1.8 V Symbol ton ts tf Ratings Turn-on time Storage time File time Test Condition(s)Sec IC=5 A , IB=1 A , VCC=250 V IC=5 A , VCC=250 V IB1 =1A , -IB2 =2 A IC=5 A , VCC=-250 V IB1 =1A , -IB2 =2 A Min Typ Mx Unit 0.5 3.5 0.5 s (1) Pulse Duration = 300 s, Duty Cycle <= 1.5% MECHANICAL DATA CASE TO-3 DIMENSIONS A B C D E G H L M N P Pin 1 : Pin 2 : Case : mm 25,51 38,93 30,12 17,25 10,89 11,62 8,54 1,55 19,47 1 4,06 inches 1,004 1,53 1,18 0,68 0,43 0,46 0,34 0,6 0,77 0,04 0,16 Base Emitter Collector Information furnished is believed to be accurate and reliable. However, CS assumes no responsability for the consequences of use of such information nor for errors that could appear. Data are subject to change without notice. COMSET SEMICONDUCTORS 3/2 |
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